Featured Research

from universities, journals, and other organizations

Joining up computer memory

Date:
January 22, 2014
Source:
The Agency for Science, Technology and Research (A*STAR)
Summary:
Innovative electrodes allow new computer memory technologies to be compatible with existing circuitry. The computing industry faces constant demands to provide faster access to data and reduce power consumption. As current memory systems cannot meet these demands indefinitely, it is essential to develop entirely new technologies. One strong contender is resistive random access memory (RRAM), which stores binary information by switching a dielectric material between conducting and non-conducting states.

Innovative electrodes allow new computer memory technologies to be compatible with existing circuitry.

Related Articles


The computing industry faces constant demands to provide faster access to data and reduce power consumption. As current memory systems cannot meet these demands indefinitely, it is essential to develop entirely new technologies. One strong contender is resistive random access memory (RRAM), which stores binary information by switching a dielectric material between conducting and non-conducting states.

A seamless transition to this new technology requires that RRAM memory cells be compatible with existing electronics, which are usually based on complementary metal oxide semiconductors (CMOS). Now, Xin Peng Wang and co-workers at the A*STAR Institute of Microelectronics, Singapore, have designed nickel-based electrodes that can couple RRAM to CMOS systems as well as reduce the current required to switch the RRAM between memory states1.

"One of the current most dominant memory systems, NAND flash, is expected to reach the limit of its scalability in 2017 or 2018," says Wang. "We need to identify emerging non-volatile memory systems with higher densities, to make up the market. Recently, RRAM has attracted lots of attention due to its fast programming and erasing speeds, high endurance and good retention of data."

Preventing neighboring RRAM cells from interfering with one another requires each cell to contain a selector made from a diode or transistor. Diode selectors have proved difficult to implement, therefore Wang and co-workers aimed to make RRAM stacks that were compatible with CMOS transistors.

To build the prototype RRAM cells, the researchers used three layers. They used physical vapor deposition to create a bottom electrode of nickel silicide or nickel germanosilicide, before adding a central dielectric switching layer of hafnium oxide, and a final top electrode of titanium nitride.

The researchers found that they could quickly and reliably switch the memory state of their cells, using very low operating currents. They suggest that the switching is enhanced by oxidation and reduction of nickel at the interfacial layer between the electrode and the dielectric. By providing more mobile oxygen species, these reactions might accelerate the formation and rupture of conductive filaments.

"Our electrodes can be easily formed on the source or drain terminal of a transistor," says Wang. "In fact, our design effectively uses a CMOS transistor source or drain directly as the bottom electrode in a RRAM cell. This can lower the total cost and improve the scalability."

In future, Wang and co-workers hope to shrink their nickel-based RRAM cells to a practical circuit scale to bring this promising technology into production.

The A*STAR-affiliated researchers contributing to this research are from the Institute of Microelectronics.


Story Source:

The above story is based on materials provided by The Agency for Science, Technology and Research (A*STAR). Note: Materials may be edited for content and length.


Journal Reference:

  1. X. P. Wang, Z. Fang, Z. X. Chen, A. R. Kamath, L. J. Tang, G.-Q. Lo, D.-L. Kwong. Ni-Containing Electrodes for Compact Integration of Resistive Random Access Memory With CMOS. IEEE Electron Device Letters, 2013; 34 (4): 508 DOI: 10.1109/LED.2013.2245627

Cite This Page:

The Agency for Science, Technology and Research (A*STAR). "Joining up computer memory." ScienceDaily. ScienceDaily, 22 January 2014. <www.sciencedaily.com/releases/2014/01/140122092445.htm>.
The Agency for Science, Technology and Research (A*STAR). (2014, January 22). Joining up computer memory. ScienceDaily. Retrieved November 27, 2014 from www.sciencedaily.com/releases/2014/01/140122092445.htm
The Agency for Science, Technology and Research (A*STAR). "Joining up computer memory." ScienceDaily. www.sciencedaily.com/releases/2014/01/140122092445.htm (accessed November 27, 2014).

Share This


More From ScienceDaily



More Computers & Math News

Thursday, November 27, 2014

Featured Research

from universities, journals, and other organizations


Featured Videos

from AP, Reuters, AFP, and other news services

EU Pushes Google For Worldwide Right To Be Forgotten

EU Pushes Google For Worldwide Right To Be Forgotten

Newsy (Nov. 27, 2014) Privacy regulators recommend Google expand its requested removals to apply to all its web domains. Video provided by Newsy
Powered by NewsLook.com
Predictions Of Tablets' Demise Sound Familiar

Predictions Of Tablets' Demise Sound Familiar

Newsy (Nov. 26, 2014) The tablet's days are numbered, at least according to a recent IDC report. The market-research firm paints a grim outlook for tablets. Video provided by Newsy
Powered by NewsLook.com
Today's Prostheses Are More Capable Than Ever

Today's Prostheses Are More Capable Than Ever

Newsy (Nov. 26, 2014) Advances in prosthetics are making replacement body parts stronger and more lifelike than they’ve ever been. Video provided by Newsy
Powered by NewsLook.com
FCC Forces T-Mobile To Alert Customers Of Data Throttling

FCC Forces T-Mobile To Alert Customers Of Data Throttling

Newsy (Nov. 25, 2014) T-Mobile and the FCC have reached an agreement requiring the company to alert customers when it throttles their data speeds. Video provided by Newsy
Powered by NewsLook.com

Search ScienceDaily

Number of stories in archives: 140,361

Find with keyword(s):
Enter a keyword or phrase to search ScienceDaily for related topics and research stories.

Save/Print:
Share:

Breaking News:

Strange & Offbeat Stories


Space & Time

Matter & Energy

Computers & Math

In Other News

... from NewsDaily.com

Science News

Health News

Environment News

Technology News



Save/Print:
Share:

Free Subscriptions


Get the latest science news with ScienceDaily's free email newsletters, updated daily and weekly. Or view hourly updated newsfeeds in your RSS reader:

Get Social & Mobile


Keep up to date with the latest news from ScienceDaily via social networks and mobile apps:

Have Feedback?


Tell us what you think of ScienceDaily -- we welcome both positive and negative comments. Have any problems using the site? Questions?
Mobile: iPhone Android Web
Follow: Facebook Twitter Google+
Subscribe: RSS Feeds Email Newsletters
Latest Headlines Health & Medicine Mind & Brain Space & Time Matter & Energy Computers & Math Plants & Animals Earth & Climate Fossils & Ruins