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Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology, which has been in development since the 1990s.

Its proponents believe that the advantages are so overwhelming that MRAM will eventually become dominant.

Unlike conventional RAM chip technologies, data is not stored as electric charge or current flows, but by magnetic storage elements.

Note:   The above text is excerpted from the Wikipedia article "MRAM", which has been released under the GNU Free Documentation License.
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December 1, 2015

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