Featured Research

from universities, journals, and other organizations

New 'FeTRAM' is promising computer memory technology

Date:
September 27, 2011
Source:
Purdue University
Summary:
Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices. The technology combines silicon nanowires with a "ferroelectric" polymer.

This diagram shows the layout for a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.
Credit: Image courtesy of Birck Nanotechnology Center, Purdue University

Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.

Related Articles


The technology combines silicon nanowires with a "ferroelectric" polymer, a material that switches polarity when electric fields are applied, making possible a new type of ferroelectric transistor.

"It's in a very nascent stage," said doctoral student Saptarshi Das, who is working with Joerg Appenzeller, a professor of electrical and computer engineering and scientific director of nanoelectronics at Purdue's Birck Nanotechnology Center.

The ferroelectric transistor's changing polarity is read as 0 or 1, an operation needed for digital circuits to store information in binary code consisting of sequences of ones and zeroes. The new technology is called FeTRAM, for ferroelectric transistor random access memory.

"We've developed the theory and done the experiment and also showed how it works in a circuit," he said. Findings are detailed in a research paper that appeared this month in Nano Letters, published by the American Chemical Society.

The FeTRAM technology has nonvolatile storage, meaning it stays in memory after the computer is turned off. The devices have the potential to use 99 percent less energy than flash memory, a non-volatile computer storage chip and the predominant form of memory in the commercial market.

"However, our present device consumes more power because it is still not properly scaled," Das said. "For future generations of FeTRAM technologies one of the main objectives will be to reduce the power dissipation. They might also be much faster than another form of computer memory called SRAM."

The FeTRAM technology fulfills the three basic functions of computer memory: to write information, read the information and hold it for a long period of time.

"You want to hold memory as long as possible, 10 to 20 years, and you should be able to read and write as many times as possible," Das said. "It should also be low power to keep your laptop from getting too hot. And it needs to scale, meaning you can pack many devices into a very small area. The use of silicon nanowires along with this ferroelectric polymer has been motivated by these requirements."

The new technology also is compatible with industry manufacturing processes for complementary metal oxide semiconductors, or CMOS, used to produce computer chips. It has the potential to replace conventional memory systems.

A patent application has been filed for the concept.

The FeTRAMs are similar to state-of-the-art ferroelectric random access memories, FeRAMs, which are in commercial use but represent a relatively small part of the overall semiconductor market. Both use ferroelectric material to store information in a nonvolatile fashion, but unlike FeRAMS, the new technology allows for nondestructive readout, meaning information can be read without losing it.

This nondestructive readout is possible by storing information using a ferroelectric transistor instead of a capacitor, which is used in conventional FeRAMs.

This work was supported by the Nanotechnology Research Initiative (NRI) through Purdue's Network for Computational Nanotechnology (NCN), which is supported by National Science Foundation.


Story Source:

The above story is based on materials provided by Purdue University. The original article was written by Emil Venere. Note: Materials may be edited for content and length.


Journal Reference:

  1. Saptarshi Das, Joerg Appenzeller. FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell. Nano Letters, 2011; 11 (9): 4003 DOI: 10.1021/nl2023993

Cite This Page:

Purdue University. "New 'FeTRAM' is promising computer memory technology." ScienceDaily. ScienceDaily, 27 September 2011. <www.sciencedaily.com/releases/2011/09/110927155228.htm>.
Purdue University. (2011, September 27). New 'FeTRAM' is promising computer memory technology. ScienceDaily. Retrieved October 30, 2014 from www.sciencedaily.com/releases/2011/09/110927155228.htm
Purdue University. "New 'FeTRAM' is promising computer memory technology." ScienceDaily. www.sciencedaily.com/releases/2011/09/110927155228.htm (accessed October 30, 2014).

Share This



More Computers & Math News

Thursday, October 30, 2014

Featured Research

from universities, journals, and other organizations


Featured Videos

from AP, Reuters, AFP, and other news services

Mind-Controlled Prosthetic Arm Restores Amputee Dexterity

Mind-Controlled Prosthetic Arm Restores Amputee Dexterity

Reuters - Innovations Video Online (Oct. 29, 2014) A Swedish amputee who became the first person to ever receive a brain controlled prosthetic arm is able to manipulate and handle delicate objects with an unprecedented level of dexterity. The device is connected directly to his bone, nerves and muscles, giving him the ability to control it with his thoughts. Matthew Stock reports. Video provided by Reuters
Powered by NewsLook.com
Robots Get Funky on the Dance Floor

Robots Get Funky on the Dance Floor

AP (Oct. 29, 2014) Dancing, spinning and fighting robots are showing off their agility at "Robocomp" in Krakow. (Oct. 29) Video provided by AP
Powered by NewsLook.com
IBM Taps Into Twitter's Data With New Partnership

IBM Taps Into Twitter's Data With New Partnership

Newsy (Oct. 29, 2014) The new partnership will allow IBM to access Twitter’s data and analytics to help IBM clients better understand their consumers. Video provided by Newsy
Powered by NewsLook.com
Google To Use Nanoparticles, Wearables To Detect Disease

Google To Use Nanoparticles, Wearables To Detect Disease

Newsy (Oct. 29, 2014) Google X wants to improve modern medicine with nanoparticles and a wearable device. It's all an attempt to tackle disease detection and prevention. Video provided by Newsy
Powered by NewsLook.com

Search ScienceDaily

Number of stories in archives: 140,361

Find with keyword(s):
Enter a keyword or phrase to search ScienceDaily for related topics and research stories.

Save/Print:
Share:

Breaking News:

Strange & Offbeat Stories


Space & Time

Matter & Energy

Computers & Math

In Other News

... from NewsDaily.com

Science News

Health News

    Environment News

    Technology News



    Save/Print:
    Share:

    Free Subscriptions


    Get the latest science news with ScienceDaily's free email newsletters, updated daily and weekly. Or view hourly updated newsfeeds in your RSS reader:

    Get Social & Mobile


    Keep up to date with the latest news from ScienceDaily via social networks and mobile apps:

    Have Feedback?


    Tell us what you think of ScienceDaily -- we welcome both positive and negative comments. Have any problems using the site? Questions?
    Mobile: iPhone Android Web
    Follow: Facebook Twitter Google+
    Subscribe: RSS Feeds Email Newsletters
    Latest Headlines Health & Medicine Mind & Brain Space & Time Matter & Energy Computers & Math Plants & Animals Earth & Climate Fossils & Ruins