Featured Research

from universities, journals, and other organizations

Ability To Write And Store Information On Electronic Devices Improved

Date:
September 14, 2007
Source:
DOE/Argonne National Laboratory
Summary:
Research provides a more thorough understanding of new mechanisms, which makes it possible to switch a magnetic nanoparticle without any magnetic field and may enable computers to more accurately write and store information.

Matthias Bode, Center for Nanoscale Materials, is shown with his enhanced spin polarized scanning tunneling microscope (SP-STM). His enhanced technique allows scientists to observe the magnetism of single atoms. Use of this method could lead to better magnetic storage devices for computers and other electronics.
Credit: Image courtesy of DOE/Argonne National Laboratory

New research led by the U.S. Department of Energy's Argonne National Laboratory physicist Matthias Bode provides a more thorough understanding of new mechanisms, which makes it possible to switch a magnetic nanoparticle without any magnetic field and may enable computers to more accurately write and store information.

Bode and four colleagues at the University of Hamburg used a special scanning tunneling microscope equipped with a magnetic probe tip to force a spin current through a small magnetic structure. The researchers were able to show that the structure's magnetization direction is not affected by a small current, but can be influenced if the spin current is sufficiently high.

Most computers today use dynamic random access memory, or DRAM, in which each piece of binary digital information, or bit, is stored in an individual capacitor in an integrated circuit. Bode's experiment focused on magneto-resistive random access memory, or MRAM, which stores data in magnetic storage elements consisting of two ferromagnetic layers separated by a thin non-magnetic spacer. While one of the two layers remains polarized in a constant direction, the other layer becomes polarized through the application of an external magnetic field either in the same direction as the top layer (for a "0") or in the opposite direction (for a "1").

Traditionally, MRAM are switched by magnetic fields. As the bit size has shrunk in each successive generation of computers in order to accommodate more memory in the same physical area, however, they have become more and more susceptible to "false writes" or "far-field" effects, Bode said. In this situation, the magnetic field may switch the magnetization not only of the target bit but of its neighbors as well. By using the tip of the Scanning Tunneling Microscope (STM), which has the potential to resolve structures down to a single atom, the scientists were able to eliminate that effect.

Bode and his colleagues were the first ones who did such work with an STM that generates high spatial-resolution data. "If you now push just a current through this bit, there's no current through the next structure over," Bode said. "This is a really local way of writing information."

The high resolution of the STM tip might enable scientists to look for small impurities in the magnetic storage structures and to investigate how they affect the magnet's polarization. This technique could lead to the discovery of a material or a method to make bit switching more efficient. "If you find that one impurity helps to switch the structure, you might be able to intentionally dope the magnet such that it switches at lower currents," Bode said.

Results of this research were published in the September 14 issue of Science and related research was published earlier this year in Nature.

Funding for this work was provided by Deutsche Forschungsgemeinschaft and the European Union project ASPRINT. This work was conducted prior to Bode's arrival at Argonne. His research at Argonne will be predominately funded by DOE's Office of Basic Energy Sciences.


Story Source:

The above story is based on materials provided by DOE/Argonne National Laboratory. Note: Materials may be edited for content and length.


Cite This Page:

DOE/Argonne National Laboratory. "Ability To Write And Store Information On Electronic Devices Improved." ScienceDaily. ScienceDaily, 14 September 2007. <www.sciencedaily.com/releases/2007/09/070913165155.htm>.
DOE/Argonne National Laboratory. (2007, September 14). Ability To Write And Store Information On Electronic Devices Improved. ScienceDaily. Retrieved August 20, 2014 from www.sciencedaily.com/releases/2007/09/070913165155.htm
DOE/Argonne National Laboratory. "Ability To Write And Store Information On Electronic Devices Improved." ScienceDaily. www.sciencedaily.com/releases/2007/09/070913165155.htm (accessed August 20, 2014).

Share This




More Computers & Math News

Wednesday, August 20, 2014

Featured Research

from universities, journals, and other organizations


Featured Videos

from AP, Reuters, AFP, and other news services

Ballmer Leaves Microsoft's Board, Has Advice For Nadella

Ballmer Leaves Microsoft's Board, Has Advice For Nadella

Newsy (Aug. 19, 2014) In a letter to Microsoft CEO Satya Nadella, Ballmer said he's leaving the board of directors and offered tips on how the company can be successful. Video provided by Newsy
Powered by NewsLook.com
What Google Can Gain From Special Accounts For Children

What Google Can Gain From Special Accounts For Children

Newsy (Aug. 19, 2014) Google will reportedly offer official accounts for children younger than 13 years old. Video provided by Newsy
Powered by NewsLook.com
Breakingviews: Ebola's Economic Impact Could Eclipse SARS

Breakingviews: Ebola's Economic Impact Could Eclipse SARS

Reuters - Business Video Online (Aug. 18, 2014) The virus ravaging Africa has yet to spread elsewhere. Yet Asia’s SARS crisis in 2003 showed how changes to behaviour can hurt the economy more than the actual disease, says Breakingviews' Una Galani. Video provided by Reuters
Powered by NewsLook.com
Twitter Users Up In Arms After 'Favorites' Show Up In Feeds

Twitter Users Up In Arms After 'Favorites' Show Up In Feeds

Newsy (Aug. 17, 2014) Twitter is testing a feature on some users that shows favorited tweets from people they follow in their own timeline, the same way a retweet appears. Video provided by Newsy
Powered by NewsLook.com

Search ScienceDaily

Number of stories in archives: 140,361

Find with keyword(s):
Enter a keyword or phrase to search ScienceDaily for related topics and research stories.

Save/Print:
Share:

Breaking News:
from the past week

In Other News

... from NewsDaily.com

Science News

Health News

Environment News

Technology News



Save/Print:
Share:

Free Subscriptions


Get the latest science news with ScienceDaily's free email newsletters, updated daily and weekly. Or view hourly updated newsfeeds in your RSS reader:

Get Social & Mobile


Keep up to date with the latest news from ScienceDaily via social networks and mobile apps:

Have Feedback?


Tell us what you think of ScienceDaily -- we welcome both positive and negative comments. Have any problems using the site? Questions?
Mobile: iPhone Android Web
Follow: Facebook Twitter Google+
Subscribe: RSS Feeds Email Newsletters
Latest Headlines Health & Medicine Mind & Brain Space & Time Matter & Energy Computers & Math Plants & Animals Earth & Climate Fossils & Ruins