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Device Controls Electron Spin At Room Temperature

Date:
April 7, 2009
Source:
North Carolina State University
Summary:
In a breakthrough for applied physics, researchers have developed a magnetic semiconductor memory device, using GaMnN thin films, which utilizes both the charge and spin of electrons at room temperature.

In a breakthrough for applied physics, North Carolina State University researchers have developed a magnetic semiconductor memory device, using GaMnN thin films, which utilizes both the charge and spin of electrons at room temperature.

The finding represents a major breakthrough, as previous devices that used magnetic semiconductors (GaMnAs) and controlled electron spin were only functional at 100 K (or -173 Celsius). By controlling the spin of electrons, the new device represents a significant advance in semiconductor efficiency and speed.

The new device is also an advance on earlier experimental models because it uses only 5-6 volts to switch the bias of the electrons. Previous cold-temperature devices used much higher voltage. The research was published April 2 in Applied Physics Letters.

The research team included NC State professors S.M. Bedair and Nadia El-Masry; adjunct professor J.M. Zavada; post-doctoral research fellow N. Nepal; and graduate students Oliver Luen and P. Frajtag. The research was supported by the U.S. Army Research Office.


Story Source:

The above story is based on materials provided by North Carolina State University. Note: Materials may be edited for content and length.


Journal Reference:

  1. N. Nepal, M. Oliver Luen, J. M. Zavada, S. M. Bedair, P. Frajtag, and N. A. El-Masry. Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films. Applied Physics Letters, 2009; 94 (13): 132505 DOI: 10.1063/1.3110963

Cite This Page:

North Carolina State University. "Device Controls Electron Spin At Room Temperature." ScienceDaily. ScienceDaily, 7 April 2009. <www.sciencedaily.com/releases/2009/04/090406102604.htm>.
North Carolina State University. (2009, April 7). Device Controls Electron Spin At Room Temperature. ScienceDaily. Retrieved October 2, 2014 from www.sciencedaily.com/releases/2009/04/090406102604.htm
North Carolina State University. "Device Controls Electron Spin At Room Temperature." ScienceDaily. www.sciencedaily.com/releases/2009/04/090406102604.htm (accessed October 2, 2014).

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