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Quest for quantum computing advanced

Date:
May 23, 2013
Source:
University of York
Summary:
Scientistst investigating the properties of ultra-thin films of new materials are helping bring quantum computing one step closer to reality.

Research teams from UW-Milwaukee and the University of York investigating the properties of ultra-thin films of new materials are helping bring quantum computing one step closer to reality.

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An on-going collaboration between physicists from York and the University of Wisconsin, Milwaukee, USA, is focusing on understanding, tailoring and tuning the electronic properties of topological insulators (TI) - new materials with surfaces that host a quantum state of matter – at the nanoscale.

Understanding the properties of thin films of the new materials and integrating them with semiconductors is an important step in creating a materials platform for quantum computers.

Professor Lian Li, from UW-Milwaukee, said: “The electrons on the surface of this material have some intriguing properties. All electrons are spinning in a quantum mechanical way, and spins are constantly knocked by random collisions (scattering).

“But on the surface of a topological insulator spinning electrons are protected from disruption by quantum effects, called time-reversal symmetry protection. This makes the materials attractive for spin-related electronics, or ‘spintronics’, which would use the orientation of the electron spin to encode information.

“In this work, we wanted to investigate if these properties of surface electrons are indeed ‘protected’ from scattering off of imperfections such as grain boundaries, a type of native and commonly found defect in the thin films made by nano size films growth techniques. And we found that these properties, although slightly modified, are indeed robust against such scattering effects.”

Results of the team’s latest research, which shows that the unique properties of a TI can be modified by intrinsic defects present in Bi2Se3films when grown on graphene/silicon carbide (SiC), were featured on the front cover of a recent issue of the journalPhysical Review Letters.

Dr Vlado Lazarov, from York’s Department of Physics, said: “Topological insulators are like no other material we have seen before and can host completely new physics. Their surfaces are unique charge and spin conductors, with no dissipation. The perfectly aligned spin currents make topological insulators a prime platform for spintronics, a research field that is already revolutionising magnetic data storage.

“The challenge is to keep these properties at the microscopic scale so that they can be applied to quantum computing. We are exploring the properties of thin films, and questions such as whether inherent defects enhance or modify the materials’ properties. We need to understand how to engineer these defects so that we can control the electronic properties of topological insulators if the dream of quantum computing is to become a reality.”

The York physicists carried out atomistic studies at the York JEOL Nanocentre at the University of York, a world-class research and teaching facility. The research was supported by the National Science Foundation, USA.


Story Source:

The above story is based on materials provided by University of York. Note: Materials may be edited for content and length.


Journal Reference:

  1. Y. Liu, Y. Y. Li, D. Gilks, V. K. Lazarov, M. Weinert, L. Li. Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi_{2}Se_{3}. Physical Review Letters, 2013; 110 (18) DOI: 10.1103/PhysRevLett.110.186804

Cite This Page:

University of York. "Quest for quantum computing advanced." ScienceDaily. ScienceDaily, 23 May 2013. <www.sciencedaily.com/releases/2013/05/130523082923.htm>.
University of York. (2013, May 23). Quest for quantum computing advanced. ScienceDaily. Retrieved December 20, 2014 from www.sciencedaily.com/releases/2013/05/130523082923.htm
University of York. "Quest for quantum computing advanced." ScienceDaily. www.sciencedaily.com/releases/2013/05/130523082923.htm (accessed December 20, 2014).

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