Featured Research

from universities, journals, and other organizations

Stress Management: X-rays Reveal Defects In Semiconductor Devices

Date:
July 10, 2006
Source:
National Institute of Standards and Technology
Summary:
NIST researchers have demonstrated a sensitive X-ray imaging technique to track crystal-structure flaws from one layer to the next in the complex multi-layer wafers used to make high-performance strained-silicon semiconductor devices.

X-ray topographs of three different strata of a strained-silicon wafer show close correspondence in defects from the base silicon layer (top) through the final strained-silicon layer (bottom). Color has been added for contrast, one particular defect area is highlighted.
Credit: Image courtesy of National Institute of Standards and Technology

Pile-ups, bad on the freeway, also are a hazard for the makers of high-performance strained-silicon (Si) semiconductor devices. A sensitive X-ray diffraction imaging technique developed by researchers at the National Institute of Standards and Technology (NIST) can help manufacturers avoid the latter—a bunching up of crystal defects caused by the manufacturing process for strained-silicon films.

Related Articles


Strained silicon is a new, rapidly developing material for building enhanced-performance silicon-based transistors. Introducing a slight tensile strain in the lattice of the silicon crystal dramatically improves the mobility of charges in the crystal, enabling faster, higher-performance devices. The strain is achieved by first growing a relatively thick crystalline layer of silicon-germanium (SiGe) on the normal silicon substrate wafer, and then growing a thin film of pure silicon on top. The difference in lattice spacing between pure silicon and SiGe creates the desired strain, but also creates occasional defects in the crystal that degrade performance. The problem is particularly bad when the defects cluster together in so-called “pile-ups.”

One of the best methods for studying crystal defects is to observe the image of X-rays diffracted from the crystal planes, a technique called X-ray topography. Until now, however, it’s been impossible to study the interaction of defects in the multiple layers of these complex Si – SiGe – Si wafers. In a recent paper in Applied Physics Letters,* researchers from NIST and AmberWave Systems Corporation (Salem, N.H.) detail a high-resolution form of X-ray topography that can distinguish individual crystal defects layer by layer. The technique combines an extremely low-angle incident X-ray beam (“glancing incidence”) to increase the signal from one layer over another and the use of highly monochromatic X-rays tuned to separate the contributions from each layer based on their different lattice spacings.

Their results show that crystal defects initially created at the interface between the silicon wafer and the SiGe layer become “templates” that propagate through that layer and create matching defects in the strained-silicon top layer. These defects, in turn, are notably persistent, remaining in the strained-silicon even through later processing that includes stripping the layer off, bonding it to an oxidized silicon wafer, and annealing it to create strained-silicon-on-insulator (SSOI) substrates.

The research was performed at Argonne National Laboratory’s Advanced Photon Source, and supported in part by the Department of Energy.


Story Source:

The above story is based on materials provided by National Institute of Standards and Technology. Note: Materials may be edited for content and length.


Cite This Page:

National Institute of Standards and Technology. "Stress Management: X-rays Reveal Defects In Semiconductor Devices." ScienceDaily. ScienceDaily, 10 July 2006. <www.sciencedaily.com/releases/2006/07/060710084614.htm>.
National Institute of Standards and Technology. (2006, July 10). Stress Management: X-rays Reveal Defects In Semiconductor Devices. ScienceDaily. Retrieved October 25, 2014 from www.sciencedaily.com/releases/2006/07/060710084614.htm
National Institute of Standards and Technology. "Stress Management: X-rays Reveal Defects In Semiconductor Devices." ScienceDaily. www.sciencedaily.com/releases/2006/07/060710084614.htm (accessed October 25, 2014).

Share This



More Matter & Energy News

Saturday, October 25, 2014

Featured Research

from universities, journals, and other organizations


Featured Videos

from AP, Reuters, AFP, and other news services

IKEA Desk Converts From Standing to Sitting With One Button

IKEA Desk Converts From Standing to Sitting With One Button

Buzz60 (Oct. 24, 2014) IKEA is out with a new convertible desk that can convert from a sitting desk to a standing one with just the push of a button. Jen Markham explains. Video provided by Buzz60
Powered by NewsLook.com
Ebola Protective Suits Being Made in China

Ebola Protective Suits Being Made in China

AFP (Oct. 24, 2014) A factory in China is busy making Ebola protective suits for healthcare workers and others fighting the spread of the virus. Duration: 00:38 Video provided by AFP
Powered by NewsLook.com
Real-Life Transformer Robot Walks, Then Folds Into a Car

Real-Life Transformer Robot Walks, Then Folds Into a Car

Buzz60 (Oct. 24, 2014) Brave Robotics and Asratec teamed with original Transformers toy company Tomy to create a functional 5-foot-tall humanoid robot that can march and fold itself into a 3-foot-long sports car. Jen Markham has the story. Video provided by Buzz60
Powered by NewsLook.com
Police Testing New Gunfire Tracking Technology

Police Testing New Gunfire Tracking Technology

AP (Oct. 24, 2014) A California-based startup has designed new law enforcement technology that aims to automatically alert dispatch when an officer's gun is unholstered and fired. Two law enforcement agencies are currently testing the technology. (Oct. 24) Video provided by AP
Powered by NewsLook.com

Search ScienceDaily

Number of stories in archives: 140,361

Find with keyword(s):
Enter a keyword or phrase to search ScienceDaily for related topics and research stories.

Save/Print:
Share:

Breaking News:

Strange & Offbeat Stories


Space & Time

Matter & Energy

Computers & Math

In Other News

... from NewsDaily.com

Science News

Health News

Environment News

Technology News



Save/Print:
Share:

Free Subscriptions


Get the latest science news with ScienceDaily's free email newsletters, updated daily and weekly. Or view hourly updated newsfeeds in your RSS reader:

Get Social & Mobile


Keep up to date with the latest news from ScienceDaily via social networks and mobile apps:

Have Feedback?


Tell us what you think of ScienceDaily -- we welcome both positive and negative comments. Have any problems using the site? Questions?
Mobile: iPhone Android Web
Follow: Facebook Twitter Google+
Subscribe: RSS Feeds Email Newsletters
Latest Headlines Health & Medicine Mind & Brain Space & Time Matter & Energy Computers & Math Plants & Animals Earth & Climate Fossils & Ruins