Scientists enhance synthesis of chromium dioxide (100) epitaxial thin film growth
- Date:
- August 8, 2014
- Source:
- World Scientific
- Summary:
- High quality CrO2 film on the (100)-oriented TiO2 substrate was fabricated by using a simple route under ambient pressures. The film shows preferential orientation along (100) direction and has a Curie temperature Tc = 396 K. The resistivity of the film is studied down to about 0.6 K and can be fitted with Á(T)=Á0+AT2exp(-”/T). The magnetization of the film becomes saturated in a relatively low field and follows Bloch's T3/2 law.
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Half-metallic ferromagnet CrO2 has attracted much attention not only because of its fundamental physics related with high spin polarization but also because of its possible applications in the emerging area of spintronics.
In these applications, synthesis of CrO2 films is of fundamental importance, primarily because of the difficulty in its synthesis, as it is not known to form under ambient pressures in a pure form. Extensive efforts have been made to grow high quality CrO2 films, but the growth technology still deserves research.
The high quality CrO2 film on the (100)-oriented TiO2 substrate has been successfully fabricated using a simple route under ambient pressures in a pure form and the transport properties and the magnetic properties were also studied.
The high quality of the sample is indicated by the XRD patterns with the narrow width of 0.38o in the rocking curve of the (200) peak. The temperature dependence of resistivity can be fitted with ρ(T)=ρ0+AT2exp(-△/T) over the range of 0.6-300 K. The in-plane magnetic measurements show that the magnetization of the film becomes saturated in a relatively low field with a small coercive field. The temperature dependence of the magnetization follows Bloch's T3/2 law and the slope suggests a critical wavelength of λ△ ~ 26.6 Å beyond which spin-flip scattering becomes important.
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Journal Reference:
- LIANG XIE, JIN ZHI ZHANG, NAI YI CUI, HONG GUANG ZHANG. TRANSPORT PROPERTIES OFCrO2(100) FILM GROWN ONTiO2BY A SIMPLE ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITION. Surface Review and Letters, 2014; 21 (04): 1450055 DOI: 10.1142/S0218625X14500553
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