Featured Research

from universities, journals, and other organizations

New components for future computer memories

Date:
November 3, 2011
Source:
Universitat Politècnica de Catalunya (UPC)
Summary:
The European TRAMS (terascale reliable adaptive memory systems) consortium investigates the impact of statistical NanoCMOS variability on terascale embedded static random-access memories (SRAMs) based on sub-16 nm technology generation using conventional and novel complementary metal-oxide semiconductor (CMOS) devices.

The European TRAMS (terascale reliable adaptive memory systems) consortium funded under FP7 investigates the impact of statistical NanoCMOS variability on terascale embedded static random-access memories (SRAMs) based on sub-16 nm technology generation using conventional and novel complementary metal-oxide semiconductor (CMOS) devices.

Related Articles


The statistical variability introduced by the discreteness of charge and matter has become a major obstacle to scaling and integration. Its impact on embedded memories is particularly dramatic, as its slows down supply voltage scaling (particularly for SRAMs) and threatens the continuation of area scaling that helps drive integration targets for systems on chip.

Concerns regarding the area of SRAM cells and power supply scaling are major drivers behind the revolutionary introduction of FinFET devices. TRAMS is striving to understand the implications of FinFET technology for the continuation of CMOS scaling as projected by Moore's law.

This year, TRAMS completed an important milestone by analysing in minute detail the statistical variability in a 10 nm-channel length FinFET on silicon-on-insulator (SOI) substrate using advanced statistical technology computer-aided design (TCAD) simulation. The FinFETs are carefully designed to meet the requirements of the International Technology Roadmap for Semiconductors (ITRS) for 11-nm CMOS technology generation. The simulations have been carried out using unique simulation technology that takes into account the major known sources of statistical variability and reliability, including random discrete dopants, the gate and the fin line edge roughness, the metal gate variability and bias temperature instability effects (e.g., NBTI/PBTI).

The results of the physical simulations have been captured in accurate statistical compact models by the TRAMS partners. These models are being used to evaluate the impact of statistical FinFET variability on the design of 11-nm embedded memories and to develop circuit and system countermeasures that will make future embedded memories resilient to statistical variability and reliability.


Story Source:

The above story is based on materials provided by Universitat Politècnica de Catalunya (UPC). Note: Materials may be edited for content and length.


Cite This Page:

Universitat Politècnica de Catalunya (UPC). "New components for future computer memories." ScienceDaily. ScienceDaily, 3 November 2011. <www.sciencedaily.com/releases/2011/11/111103081338.htm>.
Universitat Politècnica de Catalunya (UPC). (2011, November 3). New components for future computer memories. ScienceDaily. Retrieved January 30, 2015 from www.sciencedaily.com/releases/2011/11/111103081338.htm
Universitat Politècnica de Catalunya (UPC). "New components for future computer memories." ScienceDaily. www.sciencedaily.com/releases/2011/11/111103081338.htm (accessed January 30, 2015).

Share This


More From ScienceDaily



More Computers & Math News

Friday, January 30, 2015

Featured Research

from universities, journals, and other organizations


Featured Videos

from AP, Reuters, AFP, and other news services

Newsweek's Tech Sexism Story: More Than Just A Cover

Newsweek's Tech Sexism Story: More Than Just A Cover

Newsy (Jan. 29, 2015) — Some objected to the art for Newsweek&apos;s cover story "What Silicon Valley Thinks of Women," but it&apos;s achieved one mission: getting people talking. Video provided by Newsy
Powered by NewsLook.com
Now Bill Gates Is 'Concerned' About Artificial Intelligence

Now Bill Gates Is 'Concerned' About Artificial Intelligence

Newsy (Jan. 29, 2015) — Bill Gates joins the list of tech moguls scared of super-intelligent machines. He says more people should be concerned, but why? Video provided by Newsy
Powered by NewsLook.com
Facebook Rides Video, Mobile Waves To A Huge Quarter

Facebook Rides Video, Mobile Waves To A Huge Quarter

Newsy (Jan. 29, 2015) — Mobile advertising now accounts for almost three quarters of Facebook’s total ad revenue. Video provided by Newsy
Powered by NewsLook.com
ISPs Angry After FCC Raises Requirement For Broadband Speed

ISPs Angry After FCC Raises Requirement For Broadband Speed

Newsy (Jan. 29, 2015) — In a move to increase competition, the Federal Communications Commission upped the speed necessary for an Internet service to be considered broadband. Video provided by Newsy
Powered by NewsLook.com

Search ScienceDaily

Number of stories in archives: 140,361

Find with keyword(s):
 
Enter a keyword or phrase to search ScienceDaily for related topics and research stories.

Save/Print:
Share:  

Breaking News:

Strange & Offbeat Stories

 

Space & Time

Matter & Energy

Computers & Math

In Other News

... from NewsDaily.com

Science News

Health News

Environment News

Technology News



Save/Print:
Share:  

Free Subscriptions


Get the latest science news with ScienceDaily's free email newsletters, updated daily and weekly. Or view hourly updated newsfeeds in your RSS reader:

Get Social & Mobile


Keep up to date with the latest news from ScienceDaily via social networks and mobile apps:

Have Feedback?


Tell us what you think of ScienceDaily -- we welcome both positive and negative comments. Have any problems using the site? Questions?
Mobile iPhone Android Web
Follow Facebook Twitter Google+
Subscribe RSS Feeds Email Newsletters
Latest Headlines Health & Medicine Mind & Brain Space & Time Matter & Energy Computers & Math Plants & Animals Earth & Climate Fossils & Ruins